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| 1N415E SILICON MIXER DIODE DESCRIPTION: The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. PACKAGE STYLE DO- 23 FEATURES: * High burnout resistance * Low noise figure * Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 TC = 25 C TEST CONDITIONS F = 9375 MHz RL = 100 Plo = 1.0 mW IF = 30 MHz NFif = 1.5 dB MINIMUM TYPICAL MAXIM 7.5 1.3 UNITS dB f = 1000 Hz 335 8.0 465 12.4 GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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